A Radiation-Hardened and ESD-Optimized Wireline Driver with Wide Terminal Common-Mode Voltage Range

Xun Xiang, Xingguo Gao, Fan Liu, Mingdong Li, Shalin Huang, Xuewen Chen, Xichuan Zhou, Shengdong Hu, Zhi Lin, Amine Bermak, Fang Tang

Research output: Contribution to journalArticle

Abstract

In complex environment, the wireline voltage driver should be compatible with wide-terminal common-mode range, electrostatic discharge (ESD), and radiation interference. The most vulnerable devices in the conventional driver are the nMOS transistor and the silicon-controlled rectifier (SCR) against negative the ESD shock, total dose radiation, and single-event latch-up. In this paper, a reliable wireline driver circuit is proposed compatible with-7 12-V terminal common-mode voltage range. By adopting face-to-face diodes, pMOS/n-p-n hybrid driver, and Schottky diodes, the proposed driver circuit demonstrates significant protection level improvement for both ESD and radiation. Both the reference SCR-based driver and the proposed driver with the optimized circuit design and protection strategy are fabricated using a 0.6-μm bipolar-CMOS-DMOS process. Due to a simpler circuit structure, the proposed output stage has about 10% less chip area. According to the measurement results, the human-body-model ESD level of 3 kV, total dose radiation level of 100 krad(Si), and single-event effect level of 75 MeV cm2/mg are achieved in the proposed design to satisfy complex environment applications.

Original languageEnglish
Article number8125183
Pages (from-to)566-572
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume65
Issue number1
DOIs
Publication statusPublished - 1 Jan 2018

Fingerprint

Electrostatic discharge
electrostatics
Radiation
silicon controlled rectifiers
Networks (circuits)
Electric potential
electric potential
radiation
Thyristors
Dosimetry
Diodes
latch-up
dosage
human body
Schottky diodes
CMOS
Transistors
transistors
shock
diodes

Keywords

  • Aerospace electronics
  • electrostatic discharge (ESD)
  • radiation hardening
  • single-event latch-up (SEL)
  • total ionizing dose (TID)
  • wireline driver

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

A Radiation-Hardened and ESD-Optimized Wireline Driver with Wide Terminal Common-Mode Voltage Range. / Xiang, Xun; Gao, Xingguo; Liu, Fan; Li, Mingdong; Huang, Shalin; Chen, Xuewen; Zhou, Xichuan; Hu, Shengdong; Lin, Zhi; Bermak, Amine; Tang, Fang.

In: IEEE Transactions on Nuclear Science, Vol. 65, No. 1, 8125183, 01.01.2018, p. 566-572.

Research output: Contribution to journalArticle

Xiang, X, Gao, X, Liu, F, Li, M, Huang, S, Chen, X, Zhou, X, Hu, S, Lin, Z, Bermak, A & Tang, F 2018, 'A Radiation-Hardened and ESD-Optimized Wireline Driver with Wide Terminal Common-Mode Voltage Range', IEEE Transactions on Nuclear Science, vol. 65, no. 1, 8125183, pp. 566-572. https://doi.org/10.1109/TNS.2017.2778942
Xiang, Xun ; Gao, Xingguo ; Liu, Fan ; Li, Mingdong ; Huang, Shalin ; Chen, Xuewen ; Zhou, Xichuan ; Hu, Shengdong ; Lin, Zhi ; Bermak, Amine ; Tang, Fang. / A Radiation-Hardened and ESD-Optimized Wireline Driver with Wide Terminal Common-Mode Voltage Range. In: IEEE Transactions on Nuclear Science. 2018 ; Vol. 65, No. 1. pp. 566-572.
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