A precision CMOS voltage reference exploiting silicon bandgap narrowing effect

Bo Wang, Man Kay Law, Amine Bermak

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A compact voltage-mode bandgap voltage reference (BGR) is presented. Instead of using overhead circuits, the silicon bandgap narrowing effect is exploited for bipolar junction transistor's (BJT) curvature reduction and residual curvature correction. Prototype measurements in a 0.18-μm standard CMOS process show that the curvature of the BJT is effectively reduced from its inherent 3.6 mV to 1.4 mV. The proposed BGR measures a minimum temperature coefficient of 8.7 ppm/°C from -55 °C to 125 °C by batch trimming one resistor. After a curvature trimming, it further improves to 4.1 ppm/°C. The BGR has a minimum supply voltage of 1.3 V, 4.3 μA nominal current consumption, 0.03%/V line sensitivity, and 2 mV/mA load sensitivity at 25 °. The output rms noise in the 0.1 ∼ 10-Hz band measures 10.23 μV.

Original languageEnglish
Article number7118168
Pages (from-to)2128-2135
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume62
Issue number7
DOIs
Publication statusPublished - 1 Jul 2015

Fingerprint

Silicon
Energy gap
Electric potential
Trimming
Bipolar transistors
Resistors
Networks (circuits)
Temperature

Keywords

  • Bandgap narrowing (BGN)
  • bipolar junction transistor (BJT) curvature reduction
  • BJT noise
  • CMOS bandgap voltage reference (BGR)
  • curvature correction
  • process spread
  • temperature coefficient (TC)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

A precision CMOS voltage reference exploiting silicon bandgap narrowing effect. / Wang, Bo; Law, Man Kay; Bermak, Amine.

In: IEEE Transactions on Electron Devices, Vol. 62, No. 7, 7118168, 01.07.2015, p. 2128-2135.

Research output: Contribution to journalArticle

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