A 405-nW CMOS temperature sensor based on linear MOS operation

Man Kay Law, Amine Bermak

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

This brief presents a CMOS temperature sensor suitable for ultralow-power applications.With a MOS transistor operating in the linear region, a linear relationship between delay and temperature can be obtained. A differential sensing architecture is utilized to reduce the signal offset and increase the effective signal-to-noise ratio. A design methodology concerning power optimization and improved sensor linearity is also presented. The sensor, which occupies 0.0324 mm2, is fabricated using the TSMC 0.18-μm one-polysilicon six-metal (1P6M) process. Measurement results show that the sensor consumes 405 nW with a 1-V supply at 1 ksample/s at room temperature. An inaccuracy value of-0.8 °C to +1 °C from 0 °C to 100 °C after calibration is achieved.

Original languageEnglish
Pages (from-to)891-895
Number of pages5
JournalIEEE Transactions on Circuits and Systems II: Express Briefs
Volume56
Issue number12
DOIs
Publication statusPublished - Dec 2009
Externally publishedYes

Fingerprint

Temperature sensors
Sensors
MOSFET devices
Polysilicon
Signal to noise ratio
Calibration
Temperature
Metals

Keywords

  • CMOS temperature sensor
  • Ultralow-power applications

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

A 405-nW CMOS temperature sensor based on linear MOS operation. / Law, Man Kay; Bermak, Amine.

In: IEEE Transactions on Circuits and Systems II: Express Briefs, Vol. 56, No. 12, 12.2009, p. 891-895.

Research output: Contribution to journalArticle

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