A 1.1 μW CMOS smart temperature sensor with an inaccuracy of ±0.2 °C (3σ) for clinical temperature monitoring

Man Kay Law, Sanfeng Lu, Tao Wu, Amine Bermak, Pui In Mak, Rui P. Martins

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

In this paper, an ultra-low power, high accuracy CMOS smart temperature sensor customized for clinical temperature monitoring based on substrate p-n-p bipolar junction transistors (BJTs) is presented. A power efficient analog front end with a sensing-range customized multi-ratio pregain stage is proposed to effectively utilize the input range of the incremental analog-to-digital converter to relax the conversion speed and resolution requirement. A block-based data weighted averaging technique is also proposed to achieve highly accurate pre-gain ratios while significantly reducing the implementation complexity. The complete temperature sensor is implemented in a standard 0.18 μm CMOS process occupying an active area of 0.198 mm. Measurement results from 20 test chips show that an inaccuracy of ±0.2 °C (3σ) is achieved from 25 °C to 45 °C after one-point calibration. The average power consumption is 1.1 μW at a conversion speed of 2 Sa/s.

Original languageEnglish
Article number6411595
Pages (from-to)2272-2281
Number of pages10
JournalIEEE Sensors Journal
Volume16
Issue number8
DOIs
Publication statusPublished - 15 Apr 2016

Fingerprint

Smart sensors
temperature sensors
Temperature sensors
CMOS
junction transistors
Monitoring
Bipolar transistors
analog to digital converters
Digital to analog conversion
bipolar transistors
Electric power utilization
chips
Calibration
analogs
Temperature
requirements
temperature
Substrates

Keywords

  • Block-based data weighted averaging (BDWA)
  • High accuracy
  • Incremental analog-to-digital converter (I-ADC)
  • Multi-ratio pre-gain
  • Smart temperature sensor
  • Ultra-low power

ASJC Scopus subject areas

  • Instrumentation
  • Electrical and Electronic Engineering

Cite this

A 1.1 μW CMOS smart temperature sensor with an inaccuracy of ±0.2 °C (3σ) for clinical temperature monitoring. / Law, Man Kay; Lu, Sanfeng; Wu, Tao; Bermak, Amine; Mak, Pui In; Martins, Rui P.

In: IEEE Sensors Journal, Vol. 16, No. 8, 6411595, 15.04.2016, p. 2272-2281.

Research output: Contribution to journalArticle

Law, Man Kay ; Lu, Sanfeng ; Wu, Tao ; Bermak, Amine ; Mak, Pui In ; Martins, Rui P. / A 1.1 μW CMOS smart temperature sensor with an inaccuracy of ±0.2 °C (3σ) for clinical temperature monitoring. In: IEEE Sensors Journal. 2016 ; Vol. 16, No. 8. pp. 2272-2281.
@article{819be70dbd9d4d6bbcd09198a4fb1563,
title = "A 1.1 μW CMOS smart temperature sensor with an inaccuracy of ±0.2 °C (3σ) for clinical temperature monitoring",
abstract = "In this paper, an ultra-low power, high accuracy CMOS smart temperature sensor customized for clinical temperature monitoring based on substrate p-n-p bipolar junction transistors (BJTs) is presented. A power efficient analog front end with a sensing-range customized multi-ratio pregain stage is proposed to effectively utilize the input range of the incremental analog-to-digital converter to relax the conversion speed and resolution requirement. A block-based data weighted averaging technique is also proposed to achieve highly accurate pre-gain ratios while significantly reducing the implementation complexity. The complete temperature sensor is implemented in a standard 0.18 μm CMOS process occupying an active area of 0.198 mm. Measurement results from 20 test chips show that an inaccuracy of ±0.2 °C (3σ) is achieved from 25 °C to 45 °C after one-point calibration. The average power consumption is 1.1 μW at a conversion speed of 2 Sa/s.",
keywords = "Block-based data weighted averaging (BDWA), High accuracy, Incremental analog-to-digital converter (I-ADC), Multi-ratio pre-gain, Smart temperature sensor, Ultra-low power",
author = "Law, {Man Kay} and Sanfeng Lu and Tao Wu and Amine Bermak and Mak, {Pui In} and Martins, {Rui P.}",
year = "2016",
month = "4",
day = "15",
doi = "10.1109/JSEN.2016.2518706",
language = "English",
volume = "16",
pages = "2272--2281",
journal = "IEEE Sensors Journal",
issn = "1530-437X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",

}

TY - JOUR

T1 - A 1.1 μW CMOS smart temperature sensor with an inaccuracy of ±0.2 °C (3σ) for clinical temperature monitoring

AU - Law, Man Kay

AU - Lu, Sanfeng

AU - Wu, Tao

AU - Bermak, Amine

AU - Mak, Pui In

AU - Martins, Rui P.

PY - 2016/4/15

Y1 - 2016/4/15

N2 - In this paper, an ultra-low power, high accuracy CMOS smart temperature sensor customized for clinical temperature monitoring based on substrate p-n-p bipolar junction transistors (BJTs) is presented. A power efficient analog front end with a sensing-range customized multi-ratio pregain stage is proposed to effectively utilize the input range of the incremental analog-to-digital converter to relax the conversion speed and resolution requirement. A block-based data weighted averaging technique is also proposed to achieve highly accurate pre-gain ratios while significantly reducing the implementation complexity. The complete temperature sensor is implemented in a standard 0.18 μm CMOS process occupying an active area of 0.198 mm. Measurement results from 20 test chips show that an inaccuracy of ±0.2 °C (3σ) is achieved from 25 °C to 45 °C after one-point calibration. The average power consumption is 1.1 μW at a conversion speed of 2 Sa/s.

AB - In this paper, an ultra-low power, high accuracy CMOS smart temperature sensor customized for clinical temperature monitoring based on substrate p-n-p bipolar junction transistors (BJTs) is presented. A power efficient analog front end with a sensing-range customized multi-ratio pregain stage is proposed to effectively utilize the input range of the incremental analog-to-digital converter to relax the conversion speed and resolution requirement. A block-based data weighted averaging technique is also proposed to achieve highly accurate pre-gain ratios while significantly reducing the implementation complexity. The complete temperature sensor is implemented in a standard 0.18 μm CMOS process occupying an active area of 0.198 mm. Measurement results from 20 test chips show that an inaccuracy of ±0.2 °C (3σ) is achieved from 25 °C to 45 °C after one-point calibration. The average power consumption is 1.1 μW at a conversion speed of 2 Sa/s.

KW - Block-based data weighted averaging (BDWA)

KW - High accuracy

KW - Incremental analog-to-digital converter (I-ADC)

KW - Multi-ratio pre-gain

KW - Smart temperature sensor

KW - Ultra-low power

UR - http://www.scopus.com/inward/record.url?scp=84962090168&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84962090168&partnerID=8YFLogxK

U2 - 10.1109/JSEN.2016.2518706

DO - 10.1109/JSEN.2016.2518706

M3 - Article

VL - 16

SP - 2272

EP - 2281

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

SN - 1530-437X

IS - 8

M1 - 6411595

ER -