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1982 …2019
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Research Output 1982 2019

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Article
1998
12 Citations (Scopus)

Monte Carlo simulation of the charge collection contrast of spherical defects in semiconductors

Tabet, N., 1 Dec 1998, In : Semiconductor Science and Technology. 13, 12, p. 1392-1395 4 p.

Research output: Contribution to journalArticle

Semiconductor materials
Defects
defects
simulation
Induced currents
2 Citations (Scopus)

Monte Carlo Simulation of the recombination contrast of dislocations

Tabet, N., 1 Jan 1998, In : Solid State Phenomena. 63-64, p. 89-96 8 p.

Research output: Contribution to journalArticle

Carrier lifetime
carrier lifetime
Induced currents
Electron beams
radii
1996
18 Citations (Scopus)

Cathodoluminescence dependence upon irradiation time

Achour, S., Harabi, A. & Tabet, N., 15 Dec 1996, In : Materials Science and Engineering B. 42, 1-3, p. 289-292 4 p.

Research output: Contribution to journalArticle

Cathodoluminescence
cathodoluminescence
Irradiation
irradiation
Single crystals

Injection level and temperature dependence of the recombination activity of grain boundaries in germanium

Tabet, N. & Monty, C. J. A., 1 Dec 1996, In : Materials Science Forum. 207-209, PART 2, p. 821-824 4 p.

Research output: Contribution to journalArticle

Germanium
germanium
Grain boundaries
grain boundaries
Induced currents
12 Citations (Scopus)

Monte Carlo simulation of the EBIC grain boundary contrast in semiconductors

Tabet, N. & Ledra, M., 15 Dec 1996, In : Materials Science and Engineering B. 42, 1-3, p. 181-184 4 p.

Research output: Contribution to journalArticle

Induced currents
Electron beams
Grain boundaries
grain boundaries
electron beams
1994

Cathodoluminescence dependence on electron beam diameter

Achour, S., Benlahrache, M. T., Harabi, A. & Tabet, N., 1 May 1994, In : Materials Science and Engineering B. 24, 1-3, p. 141-143 3 p.

Research output: Contribution to journalArticle

Cathodoluminescence
cathodoluminescence
Electron beams
electron beams
Defects
2 Citations (Scopus)

On the effect of the recombination within the depletion zone on the EBIC signal at Schottky contact

Beggah, Y., Tabet, N. & Tarento, R. J., 1 May 1994, In : Materials Science and Engineering B. 24, 1-3, p. 101-104 4 p.

Research output: Contribution to journalArticle

electric contacts
depletion
Electron beams
electron beams
Temperature
1992
1 Citation (Scopus)

A Simple Derivation of the Influence of the Depletion Zone on the EBIC Collection Efficiency

Mekki, DJ., Tarento, R. J. & Tabet, N., 1992, In : Physica Status Solidi (A) Applied Research. 130, 2, p. 383-389 7 p.

Research output: Contribution to journalArticle

depletion
derivation
1989
19 Citations (Scopus)
Induced currents
Electron beams
Diodes
Semiconductor materials
Metals
1988
11 Citations (Scopus)
Induced currents
Germanium
Electron beams
Polycrystals
Topography
1982
5 Citations (Scopus)

HETERODIFFUSION D'ELEMENTS HOMOVALENTS DANS NiO PUR ET NiO DOPE PAR Cr//2O//3.

Translated title of the contribution: Heterodiffusion of Homovalent Elements in Pure NiO and Cr//2O//3-Doped NiO.Tabet, N., Dolin, C. & Monty, C., 1 Dec 1982, In : Revue internationale des hautes temperatures et des refractaires. 19, 4, p. 413-416 4 p.

Research output: Contribution to journalArticle

experimental study
Single crystals
Impurities
crystal
air